'l.eis.s.u e.mi-c.onau(oi lpioaucti, una. / tj 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mo3250,a,f, af md3251,a,f,af vceo = 40v |c = 50 ma case 32 case 33 (to-89) dual pnp silicon annular transistors, especially designed for low-level, differential amplifier applica- tions, pnp pnp pnp pin connections (bottom view) maximum ratings (each side) (t* = 25c unless otherwise noted) pnp md3250f, af MD3251F, af rating collector-base voltage collector- emitter voltage emitter -base voltage dc collector current junction temperature storage temperature range total device dissipation @ ta = 25c to-5 case derate above 25 c flat pack derate above 25 c total device dissipation @ t_ = 25 c to-5 case derate above 25 c symbol vcb vceo veb jc tj tstg pd pd value 50 40 5 50 +200 -65 to +200 one side 500 2.9 250 1.5 1.2 6.85 both sides 600 3.4 350 2.0 2.0 11.42 unit vdc vdc vdc madc c c mw mw/c mw mw/c mw mw/c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders.
md3250, a, f, af and md3251, a, f, af (continued) electrical characteristics ha = 25'c unless otherwise noted) characteristic i symbol | min| typ| max) unit] off characteristics collector-base breakdown voltage (ic = 10 madc, ie = 0) collector-emitter breakdown voltage dr = 10 madc, ir = 0) emitter-base breakdown voltage de.= 10 madc, ir =0) collector cutoff current (vcb = 50 vdc, i - 0) (vrb = 50 vdc, ie = 0, ta = 150c) emitter cutoff current (v = 3 vdc, lr = 0) trj ' l bvcbo bvceo bvebo 'cbo 'ebo 50 40 5 ? ? 70 ? ? 0.01 10 20 vdc vdc vdc madc nadc on characteristics dc forward current transfer ratio* (ic = 10 madc, vcf - 5 vdc) md3250, md32504 md3251, md3251a dc = 100 madc, v = 5 vdc) md3250, md3250a md3251, md3251a (!? = 100 madc, v- = 5 vdc, ta :; -55c) md3250, md3250a md3251, md3251a (u = 1 madc, v_p, =, 5 vdc) md3250, md3250a md3251, md3251a dc = 10 madc, v_ = 5 vdc) md3250, md3250a md3251, md3251a uc - 50 madc, v. = 5 vdc) md3250, md3250a md3251, md3251a collector-emitter saturation voltage* dc * 10 madc, ib ^ 1. 0 madc) (ir = 50 madc, ir = 5 madc) base-emitter saturation voltage' (ic = 10 madc, ib - i, 0 madc) d- - 50 madc, i_ -- 5 madc) l t> h_* fe v + ce(sat) vbe(sat)* 25 50 50 100 25 50 50 100 50 100 15 30 ? ? 0.6 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 150 300 ? ? 150 300 ? ? ? ? 0.25 0. 50 0. 9 1.2 vdc vdc small signal characteristics current-gain - bandwidth product md3250, md3250a dc = 10 madc, vrp = 20 vdc, f = 100 mhz) md3251, md3251a output capacitance (vrn -- 5 vdc, ip - 0, f -- locfkhz ) input capacitance (,vbe = 0. 5 vdc, ir - 0, f = 100 khz ) small signal current gain md3250, md3250a dc = 1.0 ma, vcp ^ 10 v, [ = 1 khz) md3251, md3251a voltage feedback ratio md3250, md3250a dc = 1.0 ma, vce = 10 v, f = 1 khz) md3251, md3251a input impedance md3250, md3250a (ic = 1.0 ma, vre - 10 v, f = 1 khz) md3251, md3251a output admittance md3250, md3250a (ic - 1.0 ma, vrf = 10 v, f = 1 khz) md3251, md3251a wide band noise figure dc = 100 ma, vce = 10 v, h =3 kohm, md3250, md3250a noise bandwidth 10 cpa to 15. 7 khz) md3251, md3251a ft cob c. hfo hr? h. h? nf 200 250 ? ? 50 100 ? ? 1 2 4 10 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ? 6 8 200 400 10 20 6 12 40 60 4 3 mhz pf pf ? x10-'4 kohms mmhos db matching characteristics (types md3250a and md3251a only) dc current cain ratio" dc = loouadc and 1 madc, vrf = 5 vdc) md3250a, md3251a base voltage differential (i = 10 ma, to 10 ma, v = 5 vdc) md3250a, md3251a l^ l ci (ic = 100 madc, vce - 5 vdc) md3250a, md3251a base voltage differential change dc = 100 (iadc, vce = s vdc, ta = -55 to t-25c) md3250a, md3z51a dc = 100 madc, vce = 5 vdc, ta = 25 to i25c) md3250a, md3251a "fej/w vbel"vbe2l alvbervbe2' 0. 9 ? 1 ? : 1.0 5 3 0.8 1.0 ? mvdc mvdc ?pulse test 1 300 ms, duty cycle s 2% **the lowest reading is taken as hf j for this ratio
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